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A novel single-growth planar avalanche photodiode (APD) structure without guard rings is described. InP-InGaAs separate absorption, charge sheet, grading, and multiplication (SAGCM) APD's have been fabricated using the new edge breakdown suppression method. A very low, dark current of 0.6 nA at 0.98 of the breakdown voltage (BV) was measured for a 30-μm-diameter device. The maximum -3-dB electrical bandwidth was 6.1 GHz, and in the absence of obvious inductive peaking.
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Tarof et al. (1995) studied this question.
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