Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors with Stable Solid-State Continuous-Wave Laser Crystallization

We demonstrate the feasibility of continuous-wave laser crystallization (CLC) applied to product manufacturing with optimum laser parameters, paying particular attention to scan speed stability. With the optimized laser parameters, microscopic cracks at the interface between the buffer insulator and the crystallized polycrystalline silicon (poly-Si) film are significantly reduced. The optimization of laser parameters consists of increasing laser scan speed, decreasing scan speed deviation rate, and optimizing laser energy. We believe that CLC using the optimized laser parameters with a stable scan speed will provide a feasible and simple method for fabricating high-performance poly-Si thin-film transistors (TFTs).