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November 1, 1985IEEE Electron Device Letters

Comparison of different techniques for passivation of small-grain polycrystalline-Si MOSFET's

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MRM. RödderSamsung (United States)DAD.A. AntoniadisMassachusetts Institute of Technology

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Rödder et al. (1985) studied this question.

synapsesocial.com/papers/6a958f82cd304312aafa8aa2https://doi.org/10.1109/edl.1985.26233
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon1985 · 190 citations
  2. 2Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source1984 · 85 citations