The dc magnetron sputtering process of an indium-tin-oxide (ITO) target in Ar/O2 is studied. Experimental results from laser induced fluorescence measurements of sputtered indium atoms, optical emission measurements of various atomic and molecular species in the excited states, probe measurements of plasma ion density and potential, and measurements of deposited film properties (transmittance, resistivity and deposition rate) are reported. Effects of the preset pressure of introduced O2 on these parameters are investigated over a wide range of preset pressures.
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Matsuda et al. (1997) studied this question.
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