Dopant-enhanced low-temperature epitaxial growth of in situ doped silicon by rapid thermal processing chemical vapor deposition

We have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using rapid thermal processing chemical vapor deposition. Heavily arsenic-doped epitaxial layers with very abrupt dopant transition profiles and relatively uniform carrier distributions have been achieved at 800 °C. In addition, it is found that defect formation is closely related to dopant concentration.