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Solid phase epitaxial regrowth of polycrystalline silicon deposited on ‘‘oxide-free’’ (100) oriented single-crystal substrates and implanted with boron is investigated by means of secondary ion mass spectrometry, Rutherford backscattering channeling, and transmission electron microscopy. The effects of annealing ambients and heavy doping on the regrowth rate are also studied.
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Ghannam et al. (1987) studied this question.
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