Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2×1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski–Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.