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The dopant concentration in the channel region of GaAs MESFETs is tailored by focused ion-beam implantation, allowing the fabrication of devices with higher power ratings than uniformly doped devices of similar dimensions. With this technique, multiple masking steps during fabrication and avoided, and dopant concentration can be changed with great precision in both position and magnitude. The effect of dopant grading on other device parameters, such as the transconductance and the pinch-off voltage, is reported.>
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Evason et al. (1988) studied this question.
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