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Experimental results are presented for a resonant cavity enhanced photodetector operating at 2 µm based on absorption in a single, strain-compensated, In0.83Ga0.17As quantum well. The device exhibits a selectivity of 9 nm, and 18% quantum efficiency. InP/InGaAs and Si/SiO2 material systems are used for the bottom and top Bragg reflectors of the resonant cavity, respectively. The dark current densities are lower than 10-6 A/cm2 at 2 V reverse bias.
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Jourba et al. (1999) studied this question.
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