The advantages of using a resonant cavity enhancement scheme to decrease the dark current of heterojunction photodiodes are considered. It is shown that the employment of very thin absorption layers, allowed by this scheme, provides a significant reduction of the generation component of the dark current. Experimental results for InGaAs/InAlAs pin photodiodes suggest that the tunnelling component of the dark current can be also suppressed in resonant cavity enhanced photodetectors.
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Sverdlov et al. (1993) studied this question.
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