InAlGaAs/InAlAs superlattice avalanche photodiodes (SL-APDs) have been investigated for use in high bit rate optical communication systems. The high frequency response limitation of high-performance InAlGaAs/InAlAs SL-APDs is reported. For a thin avalanche layer of 0.126 µm, a gain bandwidth product of 200 GHz and a multiplied dark current of 700 nA have been attained. These values are sustainable for use in practical systems at 20 Gbit/s.
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Makita et al. (1999) studied this question.
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