In the letter we describe improved ITO/GaAs photodiodes for very high-speed applications. For the first time a GaAs device is reported which combines a millimetric wavelength response with a −3dB bandwidth of ≥ 50 GHz (10 ps FWHM), with a high quantum efficiency in excess of 30% at 820 nm.
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Parker et al. (1986) studied this question.