We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density <10 mA/cm2 and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.
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Tsybeskov et al. (1996) studied this question.