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September 1, 1985IEEE Journal of Quantum Electronics

Gain uniformity of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions

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Authors

WHW.S. HoldenAT&T (United States)JCJoe C. CampbellUniversity of VirginiaADA.G. DentaiInfinera (United States)

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Holden et al. (1985) studied this question.

synapsesocial.com/papers/6a95c330c992b03bd554fd4ehttps://doi.org/10.1109/jqe.1985.1072848
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Material‐Selective Chemical Etching in the System InGaAsP / InP1979 · 44 citations
  2. 2Concentration profiling for high voltage p+-n-n+diodes1983 · 6 citations
  3. 3Investigation of microplasmas in InP avalanche photodiodes1980 · 23 citations
  4. 4High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions1983 · 214 citations
  5. 5Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μm1976 · 149 citations