An analytical quasi-saturation model for vertical DMOS power transistors

Current analytical models for vertical DMOS power transistors do not provide accurate explanation of quasi-saturation phenomenon. An analytical quasi-saturation model for vertical DMOS power transistors considering a nonuniform electron distribution in the n-epi region is described. As verified by the PISCES results, the quasi-saturation model provides a much better explanation of DMOS quasi-saturation behaviour than the previous model.>