Efficient indium tin oxide/polycrystalline silicon solar cells

ITO/Si-N solar cells have been fabricated by a spraying process at 500 °C on polycrystalline silicon. Electroless nickel plating was used for the back Ohmic contact deposition. Electrical characteristics and spectra response of these heterojunctions are compared to those obtained on monocrystalline silicon. AM1 efficiency of ≃9% (based on active area) is achieved for polycrystalline material. Temperature dependence of open-circuit voltages and short-circuit currents are comparable to those reported for diffused Si junctions and Si-based MIS cells.