The effects of adding up to 50 mole.% of tin to pyrolytic In 2 O 3 selective coatings were investigated. Up to 10% doping the resistivity is found to decrease with the corresponding increase of carrier concentration. Further additions increase the resistivity and decrease the carrier concentration. X-ray diffraction and electron microscope observations indicated that (400) is the strongest peak. The tin additions cause the lattice parameter to decrease indicating that the decrease in resistivity is caused due to the replacement of In 3+ ions by Sn 4+ ions. The increase of resistivity at higher tin additions is due to poor crystallinity. The films with low resistivities had very low activation energies for electrical conduction.
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Agnihotri et al. (1978) studied this question.
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