Irradiation effects of 1-MeV electrons on InP-related materials such as InP, InGaP and InGaAsP have been examined in comparison with those of GaAs. Superior radiation-resistance of InP-related materials and their devices compared to GaAs has been found in terms of minority-carrier diffusion length and properties of devices such as solar cells and light-emitting devices. Moreover, minority-carrier injection-enhanced annealing of radiation-induced defects in InP-related materials has also been observed.
No takes yet. Share an insight, caveat, or question.
Yamaguchi et al. (1995) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: