Low-temperature γ-ray irradiation and subsequent minority-carrier injection are found to enhance a defect-structure transformation from a major irradiation-induced deep hole trap (Eᵥ+0.32eV) to a deeper hole-trap center (Eᵥ+0.52eV) in p-type InP. Direct experimental evidence is shown to demonstrate the role of the 0.32-eV level as an efficient nonradiative recombination center which competes with other radiative transition channels. The results show a recombination-enhanced reaction mechanism at the anion-displacement center with strong electron-phonon couplings.
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Ando et al. (1986) studied this question.
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