Room-temperature 1-MeV electron irradiations have been performed on p-type epitaxial InP and the induced defects have been investigated by deep level transient spectroscopy in the range 90–300 K. Five hole traps created by the irradiations were detected, corresponding to a total introduction rate of ∼1 cm−1, much higher than what had been found in n-InP. The dominant traps anneal out at 360–410 K.
No takes yet. Share an insight, caveat, or question.
Sibille et al. (1982) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: