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High-speed photodetectors based on InGaAs/GaAs quantum well–dot nanostructures have been investigated. A bandwidth of 8.2 GHz at a level of ‒3 dB and a wavelength of 905 nm has been demonstrated. It is shown that the speed of internal processes in quantum well–dots make it possible to create photodetectors with a bandwidth of up to 12.5 GHz and the processes of carrier thermalization from the quantum-well dot layers do not limit the speed under reverse biases of more than 5 V.
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Mintairov et al. (2022) studied this question.
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