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The influence of the anisotropic in-plane strain on the optical response of GaN layers grown on a-plane sapphire is investigated. A splitting of the Γ5 states of the A and B free excitons into two components, polarized parallel and perpendicular to the strain direction, is observed. The experimental results are discussed in the framework of the effective exciton Hamiltonian formalism.
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Paskova et al. (2002) studied this question.
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