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Electromigration was studied in a number of Al-based metallizations. For pure Al and Al–Cu alloys, open circuits were the dominant failure mode. In other systems, including layered conductors and homogeneous Al–Ti, Al–Cr, and Al–V alloys, interlevel short-circuit failure was greatly favored. Short circuits were usually detected prior to a significant increase in the conductor resistance.
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Janet M. Towner (1987) studied this question.
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