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April 11, 2008Applied Physics Express

Enhanced Temperature Characteristics of InGaAs/InAlGaAs Multi-Quantum-Well Lasers on Low-In-Content InGaAs Ternary Substrates

Takeshi Fujisawa Masakazu Arai Takaaki Kakitsuka Takayuki Yamanaka Yasuhiro Kondo Hiroshi Yasaka

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Abstract

Enhanced Temperature Characteristics of InGaAs/InAlGaAs Multi-Quantum-Well Lasers on Low-In-Content InGaAs Ternary Substrates, Fujisawa, Takeshi, Arai, Masakazu, Kakitsuka, Takaaki, Yamanaka, Takayuki, Kondo, Yasuhiro, Yasaka, Hiroshi

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Cite This Study

Fujisawa et al. (2008) studied this question.

synapsesocial.com/papers/6a966596f69cd3f69201fd3f https://doi.org/10.1143/apex.1.041203

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Theoretical gain of strained quantum well grown on an InGaAs ternary substrateOriginal Research · 1993 · 74 citations
2In0.38Ga0.62As/InAlGaAs/InGaP Strained Double Quantum Well Lasers on In0.21Ga0.79As Ternary SubstrateOriginal Research · 1996 · 17 citations
3Long-wavelength strained quantum-well lasers oscillating up to 210/spl deg/C on InGaAs ternary substratesOriginal Research · 1998 · 36 citations
4High T 0 (140 K) and low-thresholdlong-wavelength strainedquantum well lasers on InGaAs ternary substratesOriginal Research · 1997 · 50 citations
51.3 µm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary SubstratesOriginal Research · 1999 · 23 citations

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Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD1998
High-Characteristic-Temperature 1.3-$\mu$m-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method2007
Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer1994

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