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Buried heterostructure lasers with highly strained InGaAs-InGaAsP active regions, emitting at 2 μm have been fabricated and tested. The lasers exhibited threshold current densities of 500 A/cm2for 1-mm-long cavities, an internal loss of 11 cm/sup -1/, and characteristic temperatures as high as 50/spl deg/C. The gain characteristics were also investigated and a linewidth enhancement factor of 8 was determined.
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Ochiai et al. (1995) studied this question.
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