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The device parameter optimization for 1.48 mu m InGaAs/InGaAsP multiple quantum well laser diodes (MQW-LDs) was reported. Approximately 800- mu m-long MQW-LDs with five wells were found to give a moderately low driving current for 100 mW light output, as well as high maximum power. 250 mW maximum CW power was achieved for a long-cavity (1800 mu m) MQW LD. The MQW LDs were shown to operate stably at 100 mW output power as well.>
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Asano et al. (1991) studied this question.
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