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The lowest threshold operation of a strained InGaAs/InGaAsP quantum well distributed feedback laser is demonstrated at 1.95 µm, fabricated by low pressure metal organic chemical vapour deposition. The threshold current was 4 mA at 10°C. Singlemode operation was observed over the range 10–40°C. A maximum output power of 7.2 mW was obtained, in addition to an external differential quantum efficiency of 15.9%, a characteristic temperature of 34 K and a side mode suppression ratio of 33.7dB.
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Dong et al. (1997) studied this question.
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