Data are presented on strained-layer InGaAs/InGaAsP double quantum well laser diodes operating at 2.0 μm. A 200 μm broad area laser diode produces 1.1 W continuous wave (CW). The spectral full width at half maximum is 10 nm at 0.63 W CW and broadens to 17 nm at an output power of 1.03 W CW. A 1000 h lifetest is presented. A power of 8.5 W CW is achieved from a monolithic array of broad array laser diodes.
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Major et al. (1993) studied this question.
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