Excellent lasing performance is demonstrated for a 1.83-μm InGaAlAs-InP vertical-cavity surface-emitting laser (VCSEL) utilizing the buried tunnel junction technology. Threshold currents as low as 190 μA at 20/spl deg/C and operating temperatures as high as 90/spl deg/C have been measured. These values are the best ones reported so far for long-wavelength VCSELs.
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Ortsiefer et al. (2000) studied this question.
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