Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

We grow high-quality (Ga,In)(N,As) quantum wells containing 36% In and 4.5% N by molecular beam epitaxy, with a low As pressure and low substrate temperature growth concept. A V/III beam equivalent pressure ratio of 5 and a substrate temperature of 375°C lead to highly regular ten-period multiple quantum well structures having abrupt interfaces and smooth surfaces. By varying the quantum well width from 4to8nm, we observe 1.34–1.6μm emission of narrow linewidth (⩽50meV) at room temperature after annealing. The large conduction band offset of 410meV estimated from calculations is beneficial for a material system considered for high temperature laser operation.