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This paper presents results of a microscopic photoluminescence (μ-PL) characterization of strained InAs0.5P0.5/InGaAsP multiquantum well (MQW) crystals with a series of well numbers (n=2–14). This method is useful in detecting misfit dislocations in the crystals, especially at the initial stage of their generation. The μ-PL intensity profile measurements of a laser diode (LD) cavity shows the intensity, being mainly influenced by the [01̄1]-directed misfit dislocations, is closely correlated to the threshold current of the LD.
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Nakao et al. (1995) studied this question.
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