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In order to delay the occurrence of the 2D-3D growth mode transition in highly strained In x Ga 1-x As epitaxial layers grown on GaAs (001) by molecular beam epitaxy, the mass transport at the surface should be reduced. This can be achieved by increasing the growth rate. It is demonstrated in this letter that this is an efficient way to increase the critical thickness for which the 3D growth appears.
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Grandjean et al. (1993) studied this question.
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