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A versatile, digital-alloy molecular beam epitaxy (MBE) technique is employed to grow lattice-matched and strained AlGaInAs multiple-quantum well (MQW) 1.58-μm laser diodes on InP. A threshold current density as low as 510 A/cm2has been demonstrated for broad area lasers with 1% strained AlGaInAs MQWs, which is the best MBE result in this material system. A single facet pulsed power as high as 0.56 W is obtained. It is also found that the efficiency and internal loss of digital alloy AlGaInAs QW devices are comparable to lasers grown by conventional MBE.
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Liu et al. (2000) studied this question.
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