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A large-signal numerical model for a MESFET is described which allows investigations of the behavior of these devices at X-band frequencies under large-signal conditions. The authors of numerical simulations are compared with those of the measurements and provide on improved understanding of the behavior of GaAs MESFETs that operate at microwave frequencies and with high power requirements. The analysis yields some indications about the optimum design of these devices.>
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Halkias et al. (1989) studied this question.
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