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Photoelectrochemical etching of InP is used to etch deep (80 μm), narrow (20 μm) grooves. The grooves are used to precisely position cleaves in semiconductor lasers and to demonstrate the first wafer processing of long/short cleaved-coupled-cavity (C3) lasers. Large numbers of low threshold C3 lasers wth very similar cavity lengths were obtained.
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Bowers et al. (1985) studied this question.
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