The multiple-tunnel junction (MTJ) produced by forming a side-gated constriction in δ-doped GaAs is demonstrated as a basic component of single electronics. A single-electron memory cell, in which one bit of information is represented by the excess or lack of a precise number of electrons, was fabricated and the operation was confirmed at liquid helium temperature. A new switching element, the variable-barrier MTJ, and a new circuit, the single-charge injection logic circuit, are proposed.
No takes yet. Share an insight, caveat, or question.
Kazuo Nakazato (1995) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: