Preparation–physical structure relations in SiC sputtered films

Both amorphous and crystalline SiC and hydrogenated SiC films were prepared by rf sputtering in which the deposition parameters of gas pressure (Ar) and composition (Ar+H2) and the substrate temperature were controlled. The resulting physical structure of the films were consistent with the various structure zone models. Five evolutionary structural levels were observed for 5 μm thick films prepared under low mobility conditions. By increasing film bombardment and by additions of hydrogen to the sputtering gas, adatom mobility is increased leading to denser, higher zone structures. The physical structure development appears to be independent of the crystallinity of the film.