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In this paper, we report a metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure with a ZrO2 charge-trapping layer for non-volatile memory application. The superiority of this device over the traditional metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices is much better data retention and enhanced program/erase efficiency. The MAZOS device exhibits excellent memory characteristics, including a large memory window of 7.1 V under ±11 V capacitance–voltage sweep, and a greatly improved data retention (only 16% charge loss for 10 years time) along with good endurance. The MAZOS device has a strong potential for future high-performance non-volatile memory application.
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Liu et al. (2010) studied this question.
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