Analysis and design of low-dimensional structures and devices using strain: II. Strained layer systems

Large biaxial strains may be imposed on thin layers by epitaxial growth on a mismatched substrate. Such strained layers offer advantages in semiconductor devices as well as interesting new physics. Some recent work on the structural and electronic properties of (InAlGa)As strained layers on GaAs is reviewed here, together with some results on the processing of device structures.