Analysis and design of semiconductor devices using strain

A brief review of the use of hydrostatic pressure to studies of group IV and group III-V semiconductor systems and devices is given. The internal loss mechanisms in semiconductor lasers designed for optical fibre communications are identified using hydrostatic pressure and suggestions made how inbuilt strain in quantum-well and superlattice structures may be used to fabricate much improved devices. The critical hot carrier transitions in silicon and in germanium avalanche photodiodes are examined using hydrostatic pressure and again possible improvements in strained Si, Ge and SiGe alloys are suggested.