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Microwave N2O plasma oxidation of strained Si1−xGex layers at low temperature (<200 °C) is reported. The hole confinement in accumulation in a metal oxide semiconductor (MOS)-gated SiGe/Si heterostructure has been confirmed by both simulation and experiments. Electrical properties are also discussed.
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Mukhopadhyay et al. (1996) studied this question.
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