A new pixel structure is proposed for wide dynamic range CMOS image sensors. A pixel based on a three-transistor active pixel sensor has two linear responses and a logarithmic response using additional circuits. The photogate surrounding the n+/p-sub photodiode exists for the second linear response. The logarithmic response is due to the biased MOS cascode. The proposed pixel was designed and fabricated using a 0.35-μm 2-poly 4-metal standard CMOS process. The dynamic range of the pixel is higher than 106 dB. A test chip with a pixel pitch of 10 × 10 μm2and a 160 × 120 pixel array is evaluated.
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Bae et al. (2016) studied this question.
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