Cd1-xZnxSe photo-anodes: I. Auger electron spectroscopy and scanning electron microscope studies

A preparatory technique for Cs 1-x Zn x Se films is described. The results of investigations on the composition, surface features and photocorrosion of the Zn-ion-treated CdSe films have also been reported. It is shown that the annealing of these films at 100 degrees C for 30 minutes causes diffusion of Zn deep within the bulk. The resulting Cd 1-x Zn x Se films have also been examined by a scanning electron microscope. It is shown that the Zn adsorption and diffusion is mediated mainly via the grain boundaries. Short-term stability tests indicate that the S to or from Se exchange as a result of photocorrosion in the sulphide/polysulphide electrolyte is considerably reduced in Cd 1-x Zn x Se films compared to the CdSe films.