Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure

Among the three major orientations, i.e., (100), (110), and (111), Gd2O3(100) is known from the energy point of view to be least favorable on Si(100), unless accompanied by an energy reduction mechanism with a subsequent transfer of electrons across the interface into the silicon substrate. Although the growth on p-type Si(100) results in the best structural consideration from XRD, sufficiently satisfactory stability is demonstrated with Gd2O3(100)/n-type Si(100) with a significantly higher mobility enhancement at high carrier concentration with features most desirable for CMOS applications.