Energy distribution curves of photoemitted electrons are obtained for SnSe thin polycrystalline films in the 10 to 40 eV energy range. The method of preparation of the sample under ultrahigh vacuum conditions is described and the synthesis of the initial material. The quality of the sample is checked by Auger analysis which reveals a weak reactivity of the material. The EDC's show structures appearing at 0.9, 2.1 to 2.7, 3.9, 7.4 eV below the top of the valence band. Also the Sn 4d levels are investigated. The 4d(5/2) is found at 24.3 eV and the 4d(3/2) at 25.3 eV below the top of the valence band. Structures in the EDC's are compared with those of existing similar works and are interpreted by means of theoretical bands scheme.
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Bennouna et al. (1983) studied this question.