The valence band offset (VBO) of the wurtzite InN∕ZnO heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.82±0.23eV. The conduction band offset is deduced from the known VBO value to be 1.85∓0.23eV, which indicates a type-I band alignment for InN∕ZnO heterojunction.
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Zhang et al. (2007) studied this question.
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