A 2.9 μm diode laser with InAs/GaSb/Ga0.75In0.25Sb/GaSb superlattice active region displays a maximum operating temperature of 260 K. At 200 K, the threshold current density is 1.1 kA/cm2 and the quantum efficiency is >15%. The peak output power per facet exceeds 800 mW at 100 K and 200 mW at 200 K for a 0.05% duty cycle.
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Bewley et al. (1997) studied this question.