Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77–300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.