610 nm band AlGaInP compressively strained multiquantum-well laser diodes with a multiquantum barrier have been successfully fabricated by MOCVD using (100) GaAs substrates with a misorientation of 9° towards the (011) direction. The oscillating wavelength at 25°C is 615nm, which is the shortest ever reported for AlGaInP laser diodes operating at 25°C.
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Hamada et al. (1992) studied this question.
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