The optimum design for tensile-strained quantum-well structures, and the laser characteristics of AlGaInP LDs emitting at 615-635 nm are investigated. MQW structures are effective in reducing threshold currents at wavelengths shorter than 620 nm. The lowest threshold current of 95 mA at 20°C is attained in a quaternary MQW LD emitting at 615 nm.
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Tanaka et al. (1994) studied this question.
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